CN

MDPpro 850+

For production and quality control of monocrystalline Si ingots,bricks and wafers.

Si for HJT, HIT, TOPcon, bifacial PERC, PERC+ solar cells, Perovskites and more.

Features

Range of lifetimes
20 ns to 100 ms (for samples > 0.3 Ohm cm)

SEMI standard
PV9-1110

Measurement speed
< 30 sec for linescan
< 5 min for complete mapping

Simultaneous measurement of
lifetime μPCD/MDP (QSS) and resistivity

Automatic geometric recognition
G12, M10 bricks and wafers

Applications

  • Lifetime & Resistivity Mapping

  • Crystal Growth Monitoring (i. e. Slip lines)

  • Contamination Monitoring

  • Oxygen Striations/OSF Ring

  • Iron Mapping for p-doped Si

  • Light Beam Induced Current (LBIC)

  • Sheet Resistance for Emitter Layer

  • and more...

Click here to download the product flyer and technical data.

  • Slip lines in Cz-Si ingot
  • Lifetime measurement of a quasi-mono Si ingot with a lot defects

MDPstudio – Operating & Evalution Software

User-friendly and advanced operating software with:

  • Export and import functions

  • User structure with operator

  • Overview over all performed measurements

  • Sample parameter input

  • Single point measurements
    e. g. injection dependent measurements

  • Mapping

  • Recipes

  • Package of analysis functions

  • View of line scans and single transients

Configuration options

  • Spot size variation

  • Resistivity measurement (bricks/wafers)

  • Background/Bias light

  • Refl ection measurement (MDP)

  • LBIC

  • Internal iron mapping of p-doped Si

  • P/N detection

  • Bar code reader

  • Automatic geometric recognition

  • Wide range of lasers

  • Remote accessibility IP based system allows remote operation and technical support from anywhere in the world
  • Line scan of mc-Si wafer
  • Lifetime measurements of HJT wafers

Technical specifications

Materialmonocrystalline silicon
Ingot sizebetween 125 x 125 to 210 x 210 mm²,
brick length 850 mm or longer
Wafer Sizeup to 300 ¬mm diameter
Resistivity range0.5 – 5 Ohm cm. Other ranges on request
Conduction typep, n
Measurable propertieslifetime - μPCD/MDP (QSS), photoconductivity, resistivity and more
Default excitationlR laser diode (980 nm, max. 500 mW) and IR laser diode (905 nm, max. 9000 mW).
Other wavelengths are available on request
PC workstationWindows 11 or latest, .NET Framework update, 2 Ethernet ports
Power requirements100 – 250 V AC, 6 A
Dimensions
(W × H × D)		2560 × 1910 × 1440 mm
Weightapprox. 200 kg
Certificationmanufactured under ISO 9001 guidelines, CE conform

Applications for MDPpro850+

Iron concentration determination

The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.

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Trap concentration determination

Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.

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Photoconductivity measurements of implanted samples

Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...

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Injection dependent measurements

The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.

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MPD series / µPCD

µPCD/MDP (QSS)

PID series

PID

XRD series / X-ray diffraction

X-ray diffraction

Branches

Projects

Projects

Company

Company